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Intel 670p M.2 512 GB PCI Express 3.0 3D4 QLC NVMe

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SSDPEKNU512GZX1
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SSD M.2 (2280) 512GB Intel 670P (PCIe/NVMe) NVMe nicht f¼r Win 7 geeignet/ Not eligible for W7

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Description

Enhanced Power Loss Data Protection
Enhanced Power Loss Data Protection prepares the SSD for unexpected system power loss by minimizing data in transition in temporary buffers, and uses on-board power-loss protection capacitance to provide enough energy for the SSD firmware to move data from the transfer buffer and other temporary buffers to the NAND, thus protecting system and user data.

Intel® Rapid Start Technology
Intel® Rapid Start Technology allows quick system resumes from the hibernate state.

Hardware Encryption
Hardware encryption is data encryption done at the drive level. This is used to ensure that the data stored on the drive is secured from unwanted intrusion.

End-to-End Data Protection
End-to-End Data Protection ensures integrity of stored data from the computer to the SSD and back.

Temperature Monitoring and Logging
Temperature Monitoring and Logging uses an internal temperature sensor to monitor and log airflow and device internal temperature. The logged results can be accessed using the SMART command.

Intel® Smart Response Technology
Intel® Smart Response Technology combines the fast performance of a small solid state drive with the large capacity of a hard disk drive.

High Endurance Technology (HET)
High Endurance Technology (HET) in SSD’s combines Intel® NAND Flash Memory silicon enhancements and SSD system management techniques to help extend the endurance of the SSD. Endurance is defined as the amount of data that can be written to an SSD during its lifetime.

Intel® Remote Secure Erase
Intel® Remote Secure Erase provides IT administrators a secure method for remotely wiping an Intel SSD from a familiar management console when retiring or repurposing a system. This allows for immediate re-use while saving administrative time and costs.


Feature Feature Value
SSD form factor M.2
SSD capacity 512 GB
Interface PCI Express 3.0
Memory type 3D4 QLC
NVMe Yes
Component for PC/Laptop
Hardware encryption Yes
Security algorithms 256-bit AES
End-to-End Data Protection Yes
Enhanced Power Loss Data Protection technology No
SSD temperature monitoring No
Uncorrectable Bit Error Rate (UBER) < 1 per 10^15 bits read
Mean time between failures (MTBF) 1600000 h
TBW rating 185
Use conditions PC/Client/Tablet
SSD ARK ID 204107
Export Control Classification Number (ECCN) 5A992CN3
Commodity Classification Automated Tracking System (CCATS) G182471
Power consumption (idle) 0.025 W
Intel High Endurance Technology (HET) No
Intel® Rapid Start Technology Yes
Intel® Remote Secure Erase No
Intel® Smart Response Technology Yes
Operating temperature (T-T) 0 – 70 °C
Maximum operating temperature 70 °C
Operating vibration 2.17 G
Width 80 mm
Height 22 mm
Harmonized System (HS) code 84717070
Internal memory type PCIe 3.0 x4, NVMe
Processor family Intel SSD 6
Power consumption (active) 0.08 W
Launch date Q1’21
Random write (8GB span) 315000 IOPS
SSD endurance rating 185
SSD shock Oper/ing;1000G,0.5ms–NonOper/ion;1500G,0.5ms
Sequential reading 3000 MB/s
Sequential writing speed 1600 MB/s
Status Launched
Random read (8GB span) 110000 IOPS

Additional information

SSD form factor

M.2

Interface

PCI Express 3.0

NVMe

Yes

Hardware encryption

Yes

End-to-End Data Protection

Yes

SSD temperature monitoring

No

Use conditions

PC/Client/Tablet

Power consumption (idle)

0.025 W

Width

80 mm

Harmonized System (HS) code

84717070

Processor family

Intel SSD 6

Launch date

Q1'21

SSD endurance rating

185

Sequential reading

3000 MB/s

Status

Launched

SSD capacity

512 GB

Memory type

3D4 QLC

Component for

PC/Laptop

Security algorithms

256-bit AES

TBW rating

185

SSD ARK ID

204107

Intel® Remote Secure Erase

No

Operating temperature (T-T)

0 – 70 °C

Operating vibration

2.17 G

Height

22 mm

Internal memory type

PCIe 3.0 x4, NVMe

Power consumption (active)

0.08 W

Random write (8GB span)

315000 IOPS

SSD shock

Oper/ing;1000G,0.5ms–NonOper/ion;1500G,0.5ms

Sequential writing speed

1600 MB/s

Random read (8GB span)

110000 IOPS